Transient electron population and optical properties in a semiconductor quantum well

We investigate the transient behaviors of the dispersion and the absorption in a three-level GaAs/AlGaAs semiconductor quantum well system. It is found that the Fano interference and the energy splitting affect the transient behaviors dramatically, which can be used to manipulate efficiently the gain-absorption coefficient and group velocity of the probe field. The dependence of transient electron population on the Fano interference and the energy splitting is also discussed.