The distribution of dislocations in silicon iron single-crystals grown from the melt |
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Authors: | B Šesták |
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Institution: | (1) Institute of Physics, Czechosl. Acad. Sci., Prague |
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Abstract: | The distribution of dislocations in a crystal of an Fe-4.2% Si alloy prepared from the melt is studied microscopically and, by X-ray diffraction after rendering them visible by anodic dissolving. The dislocations are also studied inside the crystal by successively grinding the surface. The density of the dislocations inside the blocks is determined by calculation from microphotos, the density of the dislocations forming the boundaries between the blocks by measuring the angles between the lattices of neighbouring blocks. It is found that the dislocations are distributed very unevenly in the crystal and most of them form complicated boundaries of blocks, similarly as with ionic crystals. The distribution of dislocations is also discussed from the point of view of their formation and conclusions are reached as to the preparation of single crystals having a smaller number of dislocations.
Fe-Si, - Fe-4,2%Si, , . . , , — . , , . .
The author is indebted to Candidates of Mathematics and Physics, F. Kroupa and J. Kaczér, for careful reading and advice whereby they helped to give greater depth and accuracy to this paper. He thanks Z. Tahal and M. Honegrová for initiative shown in helping to prepare the single crystals and during exacting experimental work, and S. Kadeková for aid in adjusting the spectrometer. |
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