| 摘 要： | ![]()
Type-Ⅱ InAs/GaSb superlattices made of 13 InAs monolayers(MLs) and 7 GaSb MLs are grown on GaSb substrates by solid source molecular beam epitaxy.To obtain lattice-matched structures,thin InSb layers are inserted between InAs and GaSb layers.We complete a series of experiments to investigate the influence of the InSb deposition time,Ⅴ/Ⅲ beam-equivalent pressure ratio and interruption time between each layer,and then characterize the superlattice(SL) structures with high-resolution x-ray diffraction and atomic force microscopy.The optimized growth parameters are applied to grow the 100-period SL structure,resulting in the full-width half-maximum of 29.55 arcsec for the first SL satellite peak and zero lattice-mismatch between the zero-order SL peak and the GaSb substrate peak.
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