Morphology, composition and thermal stability of thin SiO2/HfO2 layers grown on silicon by electron-beam evaporation in vacuum |
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Authors: | A V Boryakov A S Vikhorev A V Ershov S Yu Zubkov V V Karzanov D E Nikolichev |
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Institution: | 1. Lobachevsky State University of Nizhni Novgorod, pr. Gagarina 23, Nizhni Novgorod, 603950, Russia
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Abstract: | The results of integrated studies of thin-film structures based on silicon and hafnium dioxides on silicon grown by electron-beam evaporation in vacuum are presented. The surface morphology, structural and phase composition of these films depending on the annealing temperature within 500–1100°C are studied. Special consideration is given to the change in the state of the interfaces after annealing. It is determined that annealing in a flow of nitrogen with the addition of oxygen (~10 vol %) at 700°C does not lead to structural and phase changes in the films, but the intensity of the electron paramagnetic resonance (EPR) spectra of uncompensated bonds on the HfO2-Si interface decreased. Annealing at higher temperatures stimulates crystallization of the HfO2 films and hafnium silicate is formed on the SiO2-HfO2 interface and suboxide SiO x appears on the HfO2-Si interface. |
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