The influence of strain-reducing layer on strain distribution and ground state energy levels of GaN/AlN quantum dot |
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Authors: | Liu Yu-Min Yu Zhong-Yuan Ren Xiao-Min and Xu Zi-Huan |
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Institution: | Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, Beijing 100876, China |
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Abstract: | This article deals with the strain distributions around GaN/AlN
quantum dots by using the finite element method. Special attention
is paid to the influence of Al0.2Ga0.8N strain-reducing
layer on strain distribution and electronic structure. The numerical
results show that the horizontal and the vertical strain components
are reinforced in the GaN quantum dot due to the presence of the
strain-reducing layer, but the hydrostatic strain in the quantum dot
is not influenced. According to the deformation potential theory, we
study the band edge modifications and the piezoelectric effects.
The result demonstrates that with the increase of the strain reducing layer,
the transition energy between the ground state electron and the heavy hole
increases. This result is consistent with the emission wavelength
blue shift phenomenon observed in the experiment and confirms that the
wavelength shifts toward the short wavelength range is realizable by
adjusting the structure-dependent parameters of GaN/AlN quantum dot. |
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Keywords: | quantum dot strain
distribution electronic structure |
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