Thickness‐dependent structural characteristics for a sputtering‐deposited chromium monolayer and Cr/C and Cr/Sc multilayers |
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Authors: | Hui Jiang Hua Wang Jingtao Zhu Chaofan Xue Jiayi Zhang Naxi Tian Aiguo Li |
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Institution: | 1. Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, 239 Zhangheng Road, Pudong District, Shanghai201204, People's Republic of China;2. MOE Key Laboratory of Advanced Micro-Structured Materials, School of Physics Science and Engineering, Tongji University, Shanghai200092, People's Republic of China |
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Abstract: | The interior structure, morphology and ligand surrounding of a sputtering‐deposited chromium monolayer and Cr/C and Cr/Sc multilayers are determined by various hard X‐ray techniques in order to reveal the growth characteristics of Cr‐based thin films. A Cr monolayer presents a three‐stage growth mode with sudden changes occurring at a layer thickness of ~2 nm and beyond 6 nm. Cr‐based multilayers are proven to have denser structures due to interfacial diffusion and layer growth mode. Cr/C and Cr/Sc multilayers have different interfacial widths resulting from asymmetry, degree of crystallinity and thermal stability. Cr/Sc multilayers present similar ligand surroundings to Cr foil, whereas Cr/C multilayers are similar to Cr monolayers. The aim of this study is to help understand the structural evolution regulation versus layer thickness and to improve the deposition technology of Cr‐based thin films, in particular for obtaining stable Cr‐based multilayers with ultra‐short periods. |
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Keywords: | X‐ray multilayer chromium interface growth ligand |
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