磁控溅射气体团簇源中团簇形成的DSMC研究

利用直接模拟蒙特卡洛方法(DSMC) ，模拟了磁控溅射气体团簇源中Cu+ (Cu-)的含量比例不同的条件下，Cu团簇的尺寸分布。模拟结果表明：随着含量比例的增加，团簇的尺寸分布变窄了，不带电的团簇的比例增加，不带电的铜团簇分布的最大值减小，相应的带正电荷和带负电荷团簇的比例减小；相同的含量比例下,带正电的团簇的尺寸分布与带负电荷的团簇的尺寸分布基本相同；初始Cu- 比Cu+ 的含量比例大时，输出的主要是带负电荷的团簇，带正电荷和不带电的团簇占很小的比例；Cu-含量比例的增加，负Cu团簇的尺寸分布减小。

The study of cluster growth process in a magnetron sputtering-gas cluster source by direct simulation Monte Carlo method

In a magnetron sputtering-gas cluster source, the size distributions of the Cu clusters in various concentrations of the positive Cu or negative Cu gas are studied by direct simulation Monte Carlo method. The results show that the size distribution of clusters with no charge becomes narrower and the concentration and the maximum size of clusters with no charge become larger with the increase in the concentration of the positive Cu or negative Cu gas, oppositely the concentrations of clusters with positive or negative become smaller; the concentrations of clusters with positive or negative are roughly the same in the initial situation with same concentration. The main output is the negative clusters when the concentration of the negative Cu gas is larger than the concentration of the positive Cu gas; when the increasement of the concentration of the Cu gas, the size distribution of the negative Cu clusters becomes narrower.