Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror |
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| Authors: | S.P. Ng D.Y. Tang L.J. Qin |
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| Affiliation: | a School of Electrical and Electronic Engineering, Nanyang Technological University, S1-B3a-08, Photonics Research Centre, Singapore 639798, Singapore
b National Laboratory of Crystal Materials, Shandong University, Jinan 250100, China |
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| Abstract: | We report on a diode pumped passively Q-switched Nd:Gd0.64Y0.36VO4 laser with a Cr4+:YAG saturable absorber. We show experimentally that by using an appropriately coated GaAs wafer as output coupler, the Q-switched pulse width can be significantly suppressed. Stable Q-switched pulse train with pulse width of 2.2 ns, peak power of 26.3 kW, repetition rate of 15.38 kHz have been obtained under an absorbed pump power of 8.54 W. The physical mechanism of pulse width narrowing by the GaAs wafer was also experimentally investigated. |
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| Keywords: | 42.60.Gd 42.55.Xi |
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