| 钨掺杂BiVO4光阳极降解环丙沙星的表面态行为 |
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| 引用本文： | 路子峥,苏婉宜,施钦,潘鸿辉,赵传起,黄承锋,彭进国.钨掺杂BiVO4光阳极降解环丙沙星的表面态行为[J].无机化学学报,2013,29(18). |
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| 作者姓名： | 路子峥 苏婉宜 施钦 潘鸿辉 赵传起 黄承锋 彭进国 |
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| 作者单位： | 广西民族大学材料与环境学院, 广西先进结构材料与碳中和重点实验室, 广西高校环境友好材料及碳中和新技术重点实验室, 土壤与地下水环境研究中心, 南宁 530006;广西民族大学材料与环境学院, 广西先进结构材料与碳中和重点实验室, 广西高校环境友好材料及碳中和新技术重点实验室, 土壤与地下水环境研究中心, 南宁 530006;广西化工研究院有限公司, 南宁 530006;广西民族大学化学化工学院, 南宁 530006;广西华投检测技术有限公司, 南宁 530006 |
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| 基金项目： | 中国博士后科学基金项目（No.2022MD713733）、广西高校中青年教师科研基础能力提升项目（No.2019KY0187，2022KY0154）、广西民族大学校级引进人才科研启动项目（No.2018KJD07，2022KJQD29）和广西科技计划项目（No.AD23026173，AD23026181）资助。 |
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| 摘 要： | 采用简单浸渍的方法对BiVO4光阳极进行表面钨(W)掺杂，以环丙沙星(CIP)为药品和个人护理产品(PPCPs)模型污染物，研究了W掺杂BiVO4光阳极降解CIP的表面态行为。结果表明，低浓度W掺杂对BiVO4光阳极的晶体结构、表面形貌和光吸收性能没有显著影响。但W掺杂取代了BiVO4光阳极表面的V5+，能抑制BiVO4光阳极表面V5+/V4+还原过程，减少复合中心表面态，同时引入更多氧空穴，增加活性位点表面态。CIP的降解反应受表面活性位点控制。表面W掺杂能有效促进CIP降解的电荷转移，提高BiVO4光阳极光电催化降解性能。
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| 关 键 词： | 钒酸铋 钨掺杂 光电催化氧化技术 环丙沙星 表面态 |
| 收稿时间： | 2023/6/8 0:00:00 |
| 修稿时间： | 2023/11/27 0:00:00 |
Surface state behavior of W doped BiVO4 photoanode for ciprofloxacin degradation |
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| LU Zizheng,SU Wanyi,SHI Qin,PAN Honghui,ZHAO Chuanqi,HUANG Chengfeng,PENG Jinguo.Surface state behavior of W doped BiVO4 photoanode for ciprofloxacin degradation[J].Chinese Journal of Inorganic Chemistry,2013,29(18). |
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| Authors: | LU Zizheng SU Wanyi SHI Qin PAN Honghui ZHAO Chuanqi HUANG Chengfeng PENG Jinguo |
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| Institution: | Guangxi Key Laboratory of Advanced Structural Materials and Carbon Neutralization, Guangxi Colleges and Universities Key Laboratory of Environmental-Friendly Materials and New Technology for Carbon Neutralization, Soil and Groundwater Environment Research Institute, School of Materials and Environment, Guangxi Minzu University, Nanning 530006, China;Guangxi Key Laboratory of Advanced Structural Materials and Carbon Neutralization, Guangxi Colleges and Universities Key Laboratory of Environmental-Friendly Materials and New Technology for Carbon Neutralization, Soil and Groundwater Environment Research Institute, School of Materials and Environment, Guangxi Minzu University, Nanning 530006, China;Guangxi Research Institute of Chemical Industry Co., Ltd., Nanning 530006, China;College of Chemistry and Chemical Engineering, Guangxi Minzu University, Nanning 530006, China; Guangxi Huatou Testing Technology Co., Ltd., Nanning 530006, China |
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| Abstract: | A simple immersion method was used for surface W doping of BiVO4 photoanode. Ciprofloxacin (CIP) was used as a pharmaceuticals and personal care products (PPCPs) model contaminant to study the surface state behavior of W-BiVO4 photoanode for CIP degradation. The results show that low concentration of W doping has no significant effect on the crystal structure, surface morphology and optical absorption performance of BiVO4 photo-anode. However, W doping replaces V5+ on the surface of BiVO4 photoanode, inhibiting the V5+/V4+ reduction process on the surface of BiVO4 photoanode and reducing the surface state acting as recombination centre. It can also introduce more oxygen vacancies and increase the surface state acting as reaction sites. CIP degradation reaction is controlled by surface active sites. Surface W doping can effectively promote the charge transfer for CIP degradation, thereby improving the photoelectrocatalytic degradation performance of BiVO4 photoanode. |
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| Keywords: | BiVO4 W-doping photoelectrocatalytic oxidation technology ciprofloxacin surface state |
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