HfO2/AlGaN/GaN structures with HfO2 deposited at ultra low pressure using an e‐beam |
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| Authors: | V. Tokranov S. L. Rumyantsev M. S. Shur R. Gaska S. Oktyabrsky R. Jain N. Pala |
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| Affiliation: | 1. College of Nanoscale Science & Engineering, University at Albany‐SUNY, NY 12203, USA;2. Rensselaer Polytechnic Institute, Troy, NY 12180‐3590, USA;3. Ioffe Institute of Russian Academy of Sciences, 194021 St‐Petersburg, Russia;4. Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, USA |
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| Abstract: | ![]()
We show that HfO2/AlGaN/GaN structures with HfO2 layer deposited using an e‐beam in ultra high vacuum are suitable for field effect transistors. The dielectric constant of the HfO2 was found εHfO > 23–24, which is close to the highest re‐ ported values for this material. The leakage current did not exceed 10–4 A/cm2 at the threshold voltage. The comparison of the losses in the samples with and without HfO2 indicates low concentration of the interface traps. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | 73.40.Qv 77.55.+f 81.05.Ea 81.15.Jj |
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