Carbon nanotube–polybithiophene photovoltaic devices with high open‐circuit voltage |
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| Authors: | Rodolfo L Patyk Bruno S Lomba Ana Flávia Nogueira Clascídia A Furtado Adelina Pinheiro Santos Regina M Q Mello Liliana Micaroni Ivo A Hümmelgen |
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| Institution: | 1. Departamento de Física, Universidade Federal do Paraná, Caixa Postal 19044, 81531‐990 Curitiba PR, Brazil;2. Laboratório de Nanotechnologia e Energia Solar, Instituto de Química, Unicamp, C.P. 6154, 13084‐971 Campinas, S?o Paulo, Brazil;3. Laboratório de Química de Nanoestruturas, CDTN/CNEN, Belo Horizonte, MG, Brazil;4. Departamento de Química, Universidade Federal do Paraná, Caixa Postal 19081, 81531‐990 Curitiba PR, Brazil;5. Departamento de Física, Universidade Federal do Paraná, Caixa Postal 19044, 81531‐990 Curitiba PR, BrazilPhone: +55‐41‐3361 3645, Fax: +55‐41‐3361 3645 |
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| Abstract: | We report the preparation of photovoltaic devices using modified single wall carbon nanotubes, SWNTs. Devices are produced stacking on top of fluorine‐doped tin‐oxide, an electrochemically deposited polybithiophene layer, a layer of SWNT blended with poly(3‐octylthiophene) and an evaporated top metal contact, Ca/Al or Al. Ca/Al‐top‐electrode devices achieve open‐circuit voltages of 1.81 V and average power conversion efficiency of 1.48% at irradiance of 15.5 W m–2, spectrally distributed following AM1.5. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | 81 07 De 84 60 Jt 85 35 Kt |
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