| Photocurrent properties of high—sensitivity GaN ultraviolet photodetectors |
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| 引用本文： | 周建军,江若琏,沙金,刘杰,沈波,张荣,郑有炓. Photocurrent properties of high—sensitivity GaN ultraviolet photodetectors[J]. 中国物理, 2003, 12(7): 785-788. DOI: 10.1088/1009-1963/12/7/315 |
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| 作者姓名： | 周建军 江若琏 沙金 刘杰 沈波 张荣 郑有炓 |
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| 作者单位： | Department of Physics, Nanjing University, Nanjing 210093, China |
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| 基金项目： | Project supported by the special Foundation for State Major Research Program of China (Grant No G20000683), the National Natural Science Foundation of China (Grant Nos 60276031, 60136020), and the National High Technology Development Program of China (Grant No 2002AA305304). |
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| 摘 要： | GaN epilayers were grown on sapphire substrates by metal-organic chemical vapour deposition. Metal－semiconductor－metal photoconductive detectors were fabricated using this material. The photocurrent properties of the detectors were measured and analysed. The spectrum response shows a high sensitivity in the wavelength region from 330 to 360nm, with a peak at 358nm and a sharp cutoff near 360nm. The maximum responsivities at 358nm were 700A/W (2V) and 7000A/W (30V). The relationship between responsivity and bias indicates that the responsivity increases linearly with bias until 30V. The influence of the spacing between two electrodes on the detector responsivity was also studied.
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| 关 键 词： | GaN 紫外光电探测器 氮化镓 光电流 光电性质 响应度 半导体 |
| 收稿时间： | 2003-01-15 |
Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors |
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| Zhou Jian-Jun,Jiang Ruo-Lian,Sha Jin,Liu Jie,Shen Bo,Zhang Rong and Zheng You-Dou. Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors[J]. Chinese Physics, 2003, 12(7): 785-788. DOI: 10.1088/1009-1963/12/7/315 |
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| Authors: | Zhou Jian-Jun Jiang Ruo-Lian Sha Jin Liu Jie Shen Bo Zhang Rong Zheng You-Dou |
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| Affiliation: | Department of Physics, Nanjing University, Nanjing 210093, China |
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| Abstract: | GaN epilayers were grown on sapphire substrates by metal-organic chemical vapour deposition. Metal－semiconductor－metal photoconductive detectors were fabricated using this material. The photocurrent properties of the detectors were measured and analysed. The spectrum response shows a high sensitivity in the wavelength region from 330 to 360nm, with a peak at 358nm and a sharp cutoff near 360nm. The maximum responsivities at 358nm were 700A/W (2V) and 7000A/W (30V). The relationship between responsivity and bias indicates that the responsivity increases linearly with bias until 30V. The influence of the spacing between two electrodes on the detector responsivity was also studied. |
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| Keywords: | GaN photocurrent photodetectors responsivity |
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