Electron impact ionization cross-section of C2, C3, Si2, Si3, SiC,SiC2 and Si2C

Total ionization cross-sections for C₂, C₃, Si₂, Si₃, SiC, SiC₂ and Si₂C molecules have been calculated by electron impact. Spherical complex optical potential formalism has been employed for obtaining the inelastic cross-sections for these molecules. Then by applying complex scattering potential-ionization contribution method, total ionization cross-sections are derived. These cross-sections are calculated in the energy range from ionization threshold to 2?keV. There are no measurements available in the literature to the best of our knowledge with which our results can be compared. The results show a linear relationship between maximum ionization cross-section and square root of the ratio of polarizability to ionization potential, depending on its atomicity. This gives a confirmation for the consistency of the data reported here. Present work is a maiden attempt to find electron impact ionization cross-section for these molecules, except for C₂ and C₃.