Study of Zn1−xCoxO (0.02≤x≤0.08) dilute magnetic semiconductor prepared by mechanosynthesis route |
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Authors: | S Ghosh |
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Institution: | Department of Materials Science, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700 098, India |
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Abstract: | Single-phase Zn1−xCoxO (0.02≤x≤0.08) dilute magnetic semiconductor is prepared by mechanical milling process. The shift of XRD peaks towards the higher angle and a redshift in the band gap compared to the undoped ZnO ensure the incorporation of Co2+ ions in the semiconductor host lattice. Pure ZnxCo1−xO phases show the paramagnetic behavior in the temperature range 80 K≤T≤300 K. The room temperature volume magnetic susceptibility (χv) estimated in case of Zn0.96Co0.04O is ∼10−5 emu/Oe cm3. The temperature dependence of susceptibility χv can be fitted well with Curie law confirming the paramagnetic interaction. The observed crystal-field splitting of 3d levels of Co2+ ions inside Zn1−xCoxO has been successfully interpreted using Curie law. |
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Keywords: | Dilute magnetic semiconductors Zinc oxide Paramagnetism Crystal-field splitting |
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