|
|||||
|
|
| Low frequency effects of surface states on 4H—SiC metal—semiconductor field effect transistor | |
| 引用本文： | 杨林安,于春利,张义门,张玉明. Low frequency effects of surface states on 4H—SiC metal—semiconductor field effect transistor[J]. 中国物理, 2003, 12(4): 389-393. DOI: 10.1088/1009-1963/12/4/308 |
| 作者姓名： | 杨林安 于春利 张义门 张玉明 |
| 作者单位： | Microelectronics Institute, Xidian University, Xi'an 710071, China |
| 基金项目： | Project supported by the Advanced Research Foundation for National Defence of China (Grant No. 8.1.7.3). |
| 摘 要： | The process-related surface state effect is investigated the fabrication of SiC devices, and a nonllnear model for 4H-SiC power metal-semiconductor field effect transistor (MESFET) is propose, which takes into account the surface related parameters. The frequency-and temperature-dependent transconductance dispersion is readily demonstrated in terms of the improved model. Simulation results show that larger dispersion and higher transition frequency occur in 4H-SiC MESFET than in GaAs MESFET. The advantage of this analytical model over the two-dimensional numerical simulation is the simplicity of calculations, therefore it is suitable for the processing improvement of SiC devices |
| 关 键 词： | 碳化硅 MESFET SiC 表面状态 低频跨导 金属半导体场效应晶体管 |
| 收稿时间： | 2002-07-23 |
| 修稿时间： | 2003-01-02 |
Low frequency effects of surface states on 4H-SiC metal-semiconductor field effect transistor |
|
| Yang Lin-An,Yu Chun-Li,Zhang Yi-Men and Zhang Yu-Ming. Low frequency effects of surface states on 4H-SiC metal-semiconductor field effect transistor[J]. Chinese Physics, 2003, 12(4): 389-393. DOI: 10.1088/1009-1963/12/4/308 | |
| Authors: | Yang Lin-An Yu Chun-Li Zhang Yi-Men Zhang Yu-Ming |
| Affiliation: | Microelectronics Institute, Xidian University, Xi'an 710071, China |
| Abstract: | The process-related surface state effect is investigated the fabrication of SiC devices, and a nonlinear model for 4H-SiC power metal-semiconductor field effect transistor (MESFET) is proposed, which takes into account the surface-related parameters. The frequency- and temperature- dependent transconductance dispersion is readily demonstrated in terms of the improved model. Simulation results show that larger dispersion and higher transition frequency occur in 4H-SiC MESFET than in GaAs MESFET. The advantage of this analytical model over the two-dimensional numerical simulation is the simplicity of calculations, therefore it is suitable for the processing improvement of SiC devices. |
| Keywords: | silicon carbide MESFET surface states transconductance |
| 本文献已被 维普 等数据库收录！ | |
| 点击此处可从《中国物理》浏览原始摘要信息 | |
| 点击此处可从《中国物理》下载免费的PDF全文 | |