Microstructure and electrical conductivity of YSZ thin films prepared by pulsed laser deposition |
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Authors: | S Heiroth Th Lippert A Wokaun M Döbeli |
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Institution: | (1) Paul Scherrer Institut, 5232 Villigen PSI, Switzerland;(2) Ion Beam Physics, Paul Scherrer Institut and ETH Zurich, 8093 Zurich, Switzerland |
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Abstract: | Yttria-stabilized zirconia (YSZ) is the most common solid electrolyte material used e.g. in ceramic fuel cells. Thin films
of YSZ were deposited on c-cut sapphire single crystals by pulsed laser deposition using a KrF excimer laser focused on a polycrystalline 8 mol% Y2O3-stabilized ZrO2 target. Depending on the substrate temperature and the oxygen background pressure during deposition, different microstructures
are obtained. XRD and high-resolution SEM revealed the formation of dense amorphous films at room temperature. At 600°C preferentially
(111) oriented polycrystalline films consisting of densely agglomerated nm-sized grains of the cubic phase resulted. Grain
size and surface roughness could be controlled by varying the oxygen background pressure. RBS and PIXE evidenced congruent
transfer only for a low number of pulses, indicating a dynamical change of the target stoichiometry during laser irradiation.
The in-plane ionic conductivity of the as-deposited crystalline films was comparable to bulk YSZ. The conductivity of initially
amorphous YSZ passes a maximum during the crystallization process. However, the relative changes remain small, i.e. no significant
enhancement of ionic conductivity related to the formation of a nanocrystalline microstructure is found. |
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Keywords: | PACS" target="_blank">PACS 81 15 Fg 82 45 Xy |
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