p-Type GaAs doped by diiodomethane (CI2H2) in molecular beam epitaxy, metalorganic molecular beam epitaxy, and chemical beam epitaxy |
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Authors: | N. Y. Li H. K. Dong C. W. Tu M. Geva |
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Affiliation: | a Department of Electrical and Computer Engineering, University of California at San Diego La Jolla, CA 92037-0407 USA b AT and T Bell Laboratories Breinigsville, PA 18031-9359 USA |
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Abstract: | Highly p-type carbon-doped GaAs epitaxial layers were obtained using diiodomethane (CI2H2) as a carbon source. In the low 1019 cm−3 range, almost all carbon atoms are electrically activated and at 9×1019 cm−3, 91% are activated. The carbon incorporation efficiency in GaAs layers grown by metalorganic molecular beam epitaxy (MBE) and chemical beam epitaxy (CBE) is lower than that by MBE due to the site-blocking effect of the triethylgallium molecules. In addition, in CBE of GaAs using tris-dimethylaminoarsenic (TDMAAs), the carbon incorporation is further reduced, but it can be increased by cracking TDMAAs. Annealing studies indicate no hydrogenation effect. |
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