Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum

The structural perfection of silicon carbide substrates and homoepitaxial layers grown on the substrates by sublimation has been studied by x-ray diffraction (topography and diffractometry) and optical microscopy. The optimum diffraction conditions (hkil reflections, radiation wavelength λ, and recording geometry) for revealing “micropipes” of the dislocation nature are determined. It is shown that the growth conditions used make it possible to obtain highly perfect epitaxial layers.