首页 | 本学科首页   官方微博 | 高级检索  
     检索      


On the long‐range relativistic effects in the 15N NMR chemical shifts of halogenated azines
Authors:Dmitry O Samultsev  Yury Yu Rusakov  Leonid B Krivdin
Institution:A. E. Favorsky Irkutsk Institute of Chemistry, Siberian Branch of the Russian Academy of Sciences, Irkutsk, Russia
Abstract:Long‐range β‐ and γ‐relativistic effects of halogens in 15N NMR chemical shifts of 20 halogenated azines (pyridines, pyrimidines, pyrazines, and 1,3,5‐triazines) are shown to be unessential for fluoro‐, chloro‐, and bromo‐derivatives (1–2 ppm in average). However, for iodocontaining compounds, β‐ and γ‐relativistic effects are important contributors to the accuracy of the 15N calculation. Taking into account long‐range relativistic effects slightly improves the agreement of calculation with experiment. Thus, mean average errors (MAE) of 15N NMR chemical shifts of the title compounds calculated at the non‐relativistic and full 4‐component relativistic levels in gas phase are accordingly 7.8 and 5.5 ppm for the range of about 150 ppm. Taking into account solvent effects within the polarizable continuum model scheme marginally improves agreement of computational results with experiment decreasing MAEs from 7.8 to 7.4 ppm and from 5.5 to 5.3 ppm at the non‐relativistic and relativistic levels, respectively. The best result (MAE: 5.3 ppm) is achieved at the 4‐component relativistic level using Keal and Tozer's KT3 functional used in combination with Dyall's relativistic basis set dyall.av3z with taking into account solvent effects within the polarizable continuum solvation model. The long‐range relativistic effects play a major role (of up to dozen of parts per million) in 15N NMR chemical shifts of halogenated nitrogen‐containing heterocycles, which is especially crucial for iodine derivatives. This effect should apparently be taken into account for practical purposes.
Keywords:15N NMR  chemical shift  GIAO‐DFT  halogenated azines  magnetic shielding constant  relativistic effects
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号