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Thermal properties of 15-mol% gadolinia doped ceria thin films prepared by pulsed laser ablation |
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| Authors: | K Muthukkumaran P Kuppusami R Srinivasan K Ramachandran E Mohandas S Selladurai |
| Institution: | (1) Department of Physics, Anna University, Chennai, 600 025, India;(2) Physical Metallurgy Section, Indira Gandhi Centre for Atomic Research, Kalpakkam, 603 102, India;(3) Department of Physics, Thiagarajar College, Madurai, 625 009, India;(4) School of Physics, Madurai Kamaraj University, Madurai, 625 021, India |
| Abstract: | Thermal properties of 15-mol% gadolinia doped ceria thin films (Ce0.85Gd0.15 O1.925) prepared by pulsed laser ablation on silicon substrates in the temperature range 473–973 K are presented. Thermal diffusivities and thermal conductivities were evaluated using photoacoustic spectroscopy. The influence of grain size on thermal properties of the films as a function of deposition temperature is studied. It is observed that the thermal diffusivity and the conductivity of these films decreases up to 873 K and then increases with substrate temperatures. The thermal properties obtained in these films are discussed on the basis of influence of grain size on phonon scattering. |
| Keywords: | Thin films Ceria Thermal analyses |
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