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产生区宽度模型与产生寿命的确定
引用本文:张秀淼.产生区宽度模型与产生寿命的确定[J].浙江大学学报(理学版),1993,20(4):425-428.
作者姓名:张秀淼
作者单位:杭州大学电子工程系
摘    要:本文建议了一种由两个不同电压扫描率下的饱和电容值确定产生寿命的实验方法。C}7于这一实验方法只涉及不同电压扫描率下产生区宽度之差,因此无论使用Fierret的改进的产生区宽度模型或是使用简单的Zerbst模型都将给出同样的产生寿命值。实验结果表明,对于同一个MOS电容器样品,从不同电压扫描率组合得到的产生寿命值基本一致.

关 键 词:产生区宽度  MOS电容器  半导体

The Model for Generation Region Width and Determination of Generation Lifetime
Zhang Xiumiao.The Model for Generation Region Width and Determination of Generation Lifetime[J].Journal of Zhejiang University(Sciences Edition),1993,20(4):425-428.
Authors:Zhang Xiumiao
Institution:Department of Electronic Engineering
Abstract:An experimental method to determine minority carrier generation lifetime from the values of saturation capacitance under two different voltage sweep rates has been presented. Since only the difference between generation region widthes under two different voltage sweep rates is touched upon in this method,the same value of generation lifetime will be obtained whether the model for generation region width used in determination is improved Pierret's model ,or simple Zerbst's model. The experimental results show that for the same MOS capacitor sample the obtained values of generation lifetime from varying association of voltage sweep rates are close each other.
Keywords:generation region width  MOS capacitor  semiconductor
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