| GaN纳米棒的催化合成及其发光特性 |
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| 引用本文： | 陈金华,薛成山,庄惠照,李红,秦丽霞,杨兆柱.GaN纳米棒的催化合成及其发光特性[J].物理化学学报,2008,24(2):355-358. |
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| 作者姓名： | 陈金华 薛成山 庄惠照 李红 秦丽霞 杨兆柱 |
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| 作者单位： | Institute of Semiconductors, Shandong Normal University, Jinan 250014, P. R. China |
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| 摘 要： | 使用稀土元素Tb作催化剂, 通过氨化溅射在Si(111)衬底上的Ga2O3/Tb薄膜, 成功制备出GaN纳米棒. X射线衍射测试显示, GaN纳米棒具有六方结构. 利用扫描电子显微镜和高分辨透射电子显微镜观察分析得出, 纳米棒为单晶GaN, 纳米棒的直径为50-150 nm, 长度约10 μm. 光致发光谱在368.6 nm处有一强的紫外发光峰, 说明纳米棒具有良好的发光特性. 讨论了GaN纳米棒的生长机制.
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| 关 键 词： | GaN 纳米棒 单晶 发光 |
| 收稿时间： | 2007-09-12 |
| 修稿时间： | 2007-10-18 |
Catalytic Synthesis and Luminescent Characteristics of GaN Nanorods |
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| CHEN Jin-Hua,XUE Cheng-Shan,ZHUANG Hui-Zhao,LI Hong,QIN Li-Xia,YANG Zhao-Zhu.Catalytic Synthesis and Luminescent Characteristics of GaN Nanorods[J].Acta Physico-Chimica Sinica,2008,24(2):355-358. |
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| Authors: | CHEN Jin-Hua XUE Cheng-Shan ZHUANG Hui-Zhao LI Hong QIN Li-Xia YANG Zhao-Zhu |
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| Institution: | Institute of Semiconductors, Shandong Normal University, Jinan 250014, P. R. China |
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| Abstract: | Rare earth metal seed Tb was employed for the growth of GaN nanorods. GaN nanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(111) substrates. X-ray diffraction results indicated that the nanorods were hexagonal GaN. Observations using scanning electron microscopy and high-resolution transmission electron microscopy showed that GaN was of single-crystal nanorod structure, with diameter 50-150 nm and length about 10 μm. Photoluminescence spectrum showed a strong UV emission peak at 368.6 nm, indicating that the products possess good luminescent characteristics. The growth mechanism of GaN nanorods was also discussed. |
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| Keywords: | GaN Nanorods Single crystal Luminescence |
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