Influence of europium doping on the sensitization of luminescence in GaAs/AlGaAs and InGaN/GaN quantum-well structures

A correlation between the photoluminescence spectra and structural parameters of Eu-doped quantum- well nanostructures InGaN/GaN and GaAs/AlGaAs is established. It is shown that the incorporation of rare-earth ions initiates lattice (as a rule, compressive) strains. The excitation migration in structures of high perfection stimulates transfer of nonequilibrium carriers to the ⁵ D ₂-⁵ D ₀ atomic levels of the Eu ion. In less perfect structures, the insertion of a rare-earth ion leads to the formation of isovalent traps in GaN layers capable of effectively capturing nonequilibrium carriers, which increases the intensity of photoluminescence of the structure by one order of magnitude.