| Determination of the Potential Barrier at the Metal／Oxide Interface in a Specular Spin Valve Structure with Nano—oxide Layers Using Electron Holography |
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| 引用本文： | 王岩国,沈峰,等.Determination of the Potential Barrier at the Metal／Oxide Interface in a Specular Spin Valve Structure with Nano—oxide Layers Using Electron Holography[J].中国物理快报,2002,19(10):1480-1482. |
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| 作者姓名： | 王岩国 沈峰 |
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| 作者单位： | [1]BeijingLaboratoryofElectronMicroscopy,InstituteofPhysicsandCenterforCondensedMatterPhysics,ChineseAcademyofSciences,PoBox2724,Beijing100080 [2]BeijingLaboratoryofElectronMicroscopy,InstituteofPhysicsandC |
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| 摘 要： | The local potential distribution in a specular spin valve structure with nano-oxide layers has been mapped by using off-axis electron holography in a field emission gun transmission electron microscope.A potential jump of 3-4 V across the metal/oxide interface was detected for the first time.The presence of the potential barrier confirms the formation of the metal/insulator/metal structure,which contributes to the increasing mean free path of spin-polarized elecrons via the specular reflection of spin-polarized electrons at the metal/oxide interface.It leads to nearly double enhancement of the magnetoresistance ratio from 8% to 15%.
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| 关 键 词： | 纳米氧化膜 电子全息摄影 势垒确定 |
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