Influence of the stress on magnetoelectric effect in magnetostrictive-PZT bilayers |
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Authors: | Ding Jian-ming Zhong Chong-gui Jiang Qing |
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Affiliation: | (1) Department of Physics, Suzhou University, Suzhou, 215006, China;(2) Department of Physics, Nantong University, Nantong, 226007, China |
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Abstract: | In this letter, we investigate the influence of the stress on magnetoelectric (ME) effect in a magnetostrictive-PZT bilayer. ME voltage coefficient α*E = δE / δH, where δE is the induced electric field for an applied alternating current (ac) magnetic field δH, is obtained by solving the stress-related piezoelectric constitutive equation and the conventional magnetostrictive equation with appropriate boundary condition. Based on the free-energy density function of the PZT film in stress state, we get the stress-related piezoelectric charge coefficient p d*31 and dielectric permittivity pε*33. After taking the cobalt ferrite (CFO) as magnetostrictive phase, it is found that α*E increases with decreasing 2-d compressive stress for CFO-PZT, which not only is qualitatively consistent with previous experimental measurements, but also provides a possible route to improve the ME effect. |
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Keywords: | piezoelectric magnetoelectric effect magnetostrictive |
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