The synthesis of highly oriented GaN nanowire arrays |
| |
Authors: | JC Wang CZ Zhan FG Li |
| |
Institution: | (1) School of Physics, National Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871, P.R. China, CN;(2) Institute of Physics, CAS, P.O. Box 603, Beijing 100080, P.R. China, CN |
| |
Abstract: | Highly oriented GaN nanowire arrays have been achieved by the catalytic reaction of gallium with ammonium. The resulting materials
were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (SEM), energy dispersive X-ray
spectroscopy (EDS), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM images show
that the resulting materials are nanowire arrays with a uniform length of about 10 μm. XRD, EDS, TEM and SAED indicate that
the nanowire arrays are single-crystal hexagonal GaN with a wurtzite structure. They have diameters of 10 to 20 nm.
Received: 2 October 2002 / Accepted: 7 October 2002 / Published online: 17 December 2002
RID="*"
ID="*"Corresponding author. E-mail: wwwangjc@sina.com |
| |
Keywords: | PACS: 81 15 Gh 73 61 Tm 71 20 Nr |
本文献已被 SpringerLink 等数据库收录! |
|