Grazing incidence X-ray photoemission spectroscopy of SiO2 on Si |
| |
| Institution: | 1. Chemistry for Technologies Laboratory, University of Brescia, Brescia, Italy;2. Graduate School of Engineering, Osaka City University, Osaka, Japan;3. Servicio Interdepartamental de Investigación (SIdI), Laboratorio de TXRF, Universidad Autónoma de Madrid, Madrid, Spain;4. Department of Chemistry, University of Girona, Girona, Spain;5. TU Wien, Atominstitut,Radiation Physics, Vienna, Austria;6. Fondazione Bruno Kessler, Povo, Trento, Italy;7. Bruker Nano GmbH, Berlin, Germany;8. Rigaku Corporation, Takatsuki, Osaka, Japan;9. Department of Archaeology, Ghent University, Ghent, Belgium;10. Institute of Nuclear Science and Technology, University of Nairobi, Nairobi, Kenya;11. World Agroforestry Centre (ICRAF), Nairobi, Kenya;12. Laboratorio de Física Aplicada, Departamento de Física, Universidad de Concepción, Chile;13. Gerencia Química, Laboratorio B025, Centro Atómico Constituyentes, San Martín, Argentina;1. Institute of Physics, Jan Kochanowski University, Świętokrzyska 15, 25-406 Kielce, Poland;2. Holycross Cancer Center, Artwińskiego 3, 25-734 Kielce, Poland;3. Władysław Buszkowski Children''s Hospital of Kielce, Langiewicza 2, 25-381 Kielce, Poland;4. Institute of Public Health, Jan Kochanowski University, IX Wieków Kielc 19, 25-317 Kielce, Poland |
| |
| Abstract: | We have applied grazing incidence X-ray photoemission spectroscopy to the determination of the thickness of SiO2 layers on Si, as well as surface carbon that is present. The measurements take advantage of the different optical constants of the layers. X-rays incident on the surface at grazing angle undergo total external reflection, where the fields in each layer are subject to highly non-linear changes as a function of incidence angle. X-ray photoemission excited by these fields gives information on atomic species, chemical state, and layer thickness. Simultaneous fits are made to the photoemission spectra in each layer. The method is illustrated for a thermally grown oxide layer and a native oxide on Si. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
