Ferroelectric Thin Films of Bismuth Strontium Tantalate Prepared by Alkoxide Route |
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| Authors: | EP Turevskaya VB Bergo KA Vorotilov AS Sigov D Benlian |
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| Institution: | (1) Department of Chemistry, Moscow State University, 119899 Moscow, Russia;(2) Electronics and Automation (Technical University), Moscow State Institute of Radioengineering, Vernadsky Prosp., 78, 117454 Moscow, Russia;(3) Lab. de Chimie de Coordination, Universite de Provence, Saint Jerome, 13397 Marseille, Cedex 20, France |
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| Abstract: | Study of the interactions in Bi(OR)3-Ta(OR)5-ROH (R = Me, Et, iPr) at 20°C show that metal ethoxides are the best of the investigated precursors for the production of bismuth tantalates via alkoxides. Polycrystalline SrBi2Ta2O9 (SBTO) and BiTaO4 films on Si-SiO2-Ti-Pt substrates with thicknesses of 0.4–0.5  m and 0.4 m, respectively, have been formed by sol-gel processing. The most stable solutions for film application were obtained by using mixed-metal Bi-Ta ethoxides and solutions of Sr carboxylate (2-ethylhexanoic acid derivative) in 2-ethylhexanoic acid. Films annealed at 700–750°C for 30 min were single-phased. SBTO films demonstrated good ferroelectric properties: remanent polarization ranged from 3.5 to 4.0 C/cm2 and coercive voltage 1.5–2.0 V, whereas BiTaO4 films showed dielectric behavior. |
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| Keywords: | sol-gel method alkoxides films bismuth |
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