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半导体激光器热弛豫时间测试技术研究
引用本文:陈晨,辛国锋,刘锐,瞿荣辉,方祖捷.半导体激光器热弛豫时间测试技术研究[J].光子学报,2006,35(8):1142-1145.
作者姓名:陈晨  辛国锋  刘锐  瞿荣辉  方祖捷
作者单位:中国科学院上海光学精密机械研究所,上海,201800
摘    要:利用脉冲工作状态下半导体激光器激射光谱随结温升高发生红移的原理,用Boxcar扫描在一定波长下的半导体激光器光功率随脉冲时间的变化信号,测得其时间分辨光谱;根据对应的峰值光功率出现时刻随波长变化的曲线,计算得到热弛豫时间参量值.利用此方法对一种半导体激光器进行了测试,得到其热弛豫时间为1.2 ms.

关 键 词:激光技术  半导体激光器  热驰豫时间  时间分辨光谱
收稿时间:2005-04-10
修稿时间:2005年4月10日

Measurement of Thermal Relaxation Time of Semiconductor Lasers
Chen Chen,Xin Guofeng,Liu Rui,Qu Ronghui,Fang Zujie.Measurement of Thermal Relaxation Time of Semiconductor Lasers[J].Acta Photonica Sinica,2006,35(8):1142-1145.
Authors:Chen Chen  Xin Guofeng  Liu Rui  Qu Ronghui  Fang Zujie
Institution:Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 20180
Abstract:Based on the theory of lasing wavelength red shifting of semiconductor laser due to junction temperature rising in pulsed operation,the time-resolved spectrum was measured by means of scanning optical power during the pulse at different wavelengths with a Boxcar.The thermal relaxation time was calculated by the measured relation of peak moment of optical signal within the pulse varied with wavelength.A pulse semiconductor laser was measured,and the thermal relaxation time was obtained to be 1.2 ms.
Keywords:Laser technique  Laser diode  Thermal rise-time  Time-resolved spectrum
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