| 在GaN生长初期形貌发展的观察 |
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| 引用本文： | 袁海荣,陈振,陆大成,刘祥林,韩培德,王晓晖,汪度.在GaN生长初期形貌发展的观察[J].发光学报,2001,22(Z1):29-32. |
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| 作者姓名： | 袁海荣 陈振 陆大成 刘祥林 韩培德 王晓晖 汪度 |
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| 作者单位： | 中国科学院 |
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| 基金项目： | 国家自然科学基金资助项目(60086001,69906002);国家重点基础研究项目专项支持(G20000683) |
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| 摘 要： | 报道了对GaN在生长初期形貌发展的观察和形貌的高度分布演化.形貌观察发现GaN外延层由分离的岛转化为连续的膜,形貌的发展显示GaN经历了横向生长的阶段.利用原子力显微镜有数字化记录的特点,从形貌的观察中也得到了外延层高度分布,发现高度分布可用单峰或多峰高斯分布拟合.通过与形貌特征的对比,发现宽而且不对称的分布对应着岛状的外延层形貌,可以用多峰高斯分布拟和;窄而且对称的分布则对应着比较连续的膜,可以用单峰高斯分布拟和.
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| 关 键 词： | 形貌发展 GaN外延层 |
| 文章编号： | 1000-7032(2001)增-0029-04 |
| 修稿时间： | 2001年3月17日 |
Observation of Morphology Development in Initial Growth Stage of GaN |
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| Yuan Hairong,CHEN Zhen,Lu Dacheng,LIU Xianglin,HAN Peide,WANG Xiaohui,Wang Du.Observation of Morphology Development in Initial Growth Stage of GaN[J].Chinese Journal of Luminescence,2001,22(Z1):29-32. |
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| Authors: | Yuan Hairong CHEN Zhen Lu Dacheng LIU Xianglin HAN Peide WANG Xiaohui Wang Du |
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| Abstract: | Morphology of GaN in initial growth stage was observed. It was found that GaN epilayer evolved from separate islands to coalesced film. Development of morphology indicated that GaN experienced a lateral growth dominant stage. Histograms of epilayers height distribution were derived from morphology observation. It was found that the histograms could be well fitted with multi-peak Gaussian distribution. The multi-peak feature of histograms was interpreted in relation to morphology characteristics. |
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