Microscopic phonon theory of Si/Ge nanocrystals |
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| Authors: | Wei Cheng David Marx Shang-fen Ren |
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| Affiliation: | (1) Key Laboratory in University for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing, 100875, China;(2) Department of Physics, Illinois State University, Normal, IL, 61790-4560, USA |
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| Abstract: | Microscopic phonon theory of semiconductor nanocrystals (NCs) is reviewed in this paper. Phonon modes of Si and Ge NCs with various sizes of up to 7 nm are investigated by valence force field theory. Phonon modes in spherical SiGe alloy NCs approximately 3.6 nm (containing 1147 atoms) in size have been investigated as a function of the Si concentration. Phonon density-of-states, quantum confinement effects, as well as Raman intensities are discussed. |
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| Keywords: | semiconductor nanocrystal alloy phonon lattice dynamics Raman |
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