Correlation between implantation defects and dopants in Fe-implanted SiC |
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Authors: | Declémy A Debelle A Dupeyrat C Thomé L Monnet I Eyidi D |
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Institution: | 1.Département de Physique et Mécanique des Matériaux, SP2MI, Téléport 2, Institut Pprime, UPR 3346, CNRS, Université de Poitiers, ENSMA, Boulevard Marie et Pierre Curie, BP 30179, 86962, FUTUROSCOPE-Chasseneuil Cedex, France ;2.Centre de spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, 91405, Orsay-Cedex, France ;3.Centre de Recherche sur les Matériaux, les Ions et la Photonique (CIMAP), CEA-CNRS-ENSICAEN, BP 5133, Bd Henri Becquerel, 14070, Caen Cedex 5, France ; |
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Abstract: | SiC single crystals were implanted with Fe ions and the effects of implantation temperature, Fe concentration, and subsequent
swift heavy ion irradiation on both dopant and damage depth distributions were evaluated by using RBS and channelling techniques.
It is found that an increase of the implantation temperature above the threshold temperature for amorphization can lead to
the formation of a broad layer (∼50 nm) containing a large concentration of implanted Fe atoms (∼2 at.%) but almost free of
implantation defects. This particular configuration is likely due to dynamic annealing during implantation combined with defect
annihilation at the surface. It is only observed when the implanted species concentration does not exceed a critical value
(which lies between 2 and 5 at.% in the present system). Post-implantation swift heavy ion irradiation leads to a further
decrease of the damage level, while the Fe distribution is not affected. The Fe substitutional fraction has been evaluated
in the different tested conditions. A maximum value of ∼50% is found when implantation is performed at the temperature above
that required to prevent amorphization (470 K in the present system). Swift-heavy ion irradiation seems to induce Fe atoms
relocation at substitutional positions. |
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