Formation of Ge self-assembled quantum dots on a SixGe1−x buffer layer |
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Authors: | Hyungjun Kim Joonyeon Chang |
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Institution: | a Department of Electrical Engineering, University of California Los Angeles, Los Angeles, CA 90095-1595, USA b Nuclear Materials Technology Development, Korea Atomic Energy Research Institute, Daejeon 305-353, Republic of Korea c Nano Device Research Center, Korea Institute of Science and Technology, P.O. Box 131, Chongryang, Seoul 136-791, Republic of Korea |
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Abstract: | Ge self-assembled quantum dots (SAQDs) grown on a relaxed Si0.75Ge0.25 buffer layer were observed using an atomic force microscopy (AFM) and a transmission electron microscopy (TEM). The effect of buried misfit dislocations on the formation and the distribution of Ge SAQDs was extensively investigated. The Burgers vector determination of each buried dislocation using the g·b = 0 invisibility criterion with plane-view TEM micrographs shows that Ge SAQDs grow at specific positions related to the Burgers vectors of buried dislocations. The measurement of the lateral distance between a SAQD and the corresponding misfit dislocation with plane-view and cross-sectional TEM images reveals that SAQDs form at the intersections of the top surface with the slip planes of misfit dislocations. The stress field on the top surface due to misfit dislocations is computed, and it is found that the strain energy of the misfit dislocations provides the preferential formation sites for Ge SAQDs nucleation. |
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Keywords: | 85 30 V 81 15 H 61 16 B |
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