Femtosecond pulsed laser ablation of diamond-like carbon films on silicon |
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| Authors: | Y. Dong H. Sakata |
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| Affiliation: | a Department of Mechanical Engineering, Iowa State University, Black Engineering Building, Ames, IA 50011, USA
b Department of Applied Chemistry, School of Engineering, Tokai University, Hiratsuka, Kanagawa 259-1292, Japan |
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| Abstract: | Femtosecond pulsed laser ablation (τ = 120 fs, λ = 800 nm, repetition rate = 1 kHz) of thin diamond-like carbon (DLC) films on silicon was conducted in air using a direct focusing technique for estimating ablation threshold and investigating the influence of ablation parameter on the morphological features of ablated regions. The single-pulse ablation threshold estimated by two different methods were ?th(1) = 2.43 and 2.51 J/cm2. The morphological changes were evaluated by means of scanning electron microscopy. A comparison with picosecond pulsed laser ablation shows lower threshold and reduced collateral thermal damage. |
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| Keywords: | 81.05.T 79.20.D |
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