Liquid crystal alignment properties on surface-reformed solution-derived lanthanum-doped zinc oxide films |
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Authors: | Ju Hwan Lee Jonghoon Won Hae-Chang Jeong Dong Hyun Kim Dong Wook Lee Byeong-Yun Oh |
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Affiliation: | 1. IT Nano Electrical Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea;2. ZeSHTech Co., Ltd., Business Incubator, Gwangju Institute of Science and Technology, Gwangju, Republic of Korea |
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Abstract: | Liquid crystal (LC) alignment characteristics were investigated using a solution-derived lanthanum-doped zinc oxide (La:ZnO) film that was exposed to various intensities of ion-beam (IB) irradiation. At an IB intensity of 1700 eV, uniform and homogeneous LC alignment was achieved, as revealed by cross-polarized optical microscopy and pre-tilt angle measurement. Field-emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) were used to verify that the IB irradiation induced physical and chemical surface reformation of the La:ZnO film that relate to LC alignment. FE-SEM and AFM revealed that the IB irradiation reformed the existing surface structure into a new structure with an altered surface roughness. The XPS results showed that the van der Waals force with anchoring energy increased as the IB intensity increased, and this profoundly affected the state of LC alignment. The capacitance-voltage (C-V) hysteresis curve was measured as a function of IB intensity to characterize the accumulated charge as a residual DC. Nearly zero C-V hysteresis was achieved at an IB intensity of 1700 eV. Therefore, a solution-derived La:ZnO film with an IB intensity of 1700 eV has great potential for high-quality LC applications. |
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Keywords: | Lanthanum-doped zinc oxide solution process ion-beam irradiation surface reformation liquid crystal alignment |
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