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Nanocrystalline nitrogenated diamond: An <Emphasis Type="Italic">N</Emphasis>-type electrode material |
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| Authors: | Yu V Pleskov S M Pimenov Po-Yee Lim V G Ralchenko |
| Institution: | (1) Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, Russia;(2) Prokhorov Institute of General Physics, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991, Russia;(3) Industrial Technology Research Institute, Bldg. 77, 195 Chung Hsing Rd. Sec. 4, Chutung, Hsinchu, Taiwan, 310, ROC |
| Abstract: | Nitrogenated nanocrystalline diamond thin films are grown from arc-plasma in CH4/Ar/H2/N2-gas mixtures and characterized by AFM-and Raman spectroscopy, X-ray diffraction and resistivity measurements. It is shown by Mott-Schottky plots taken in indifferent electrolyte (0.5 M H2SO4) that the behavior of the nitrogenated nanocrystalline diamond thin-film electrodes resembles that of n-type semiconductor; the donor effective concentration therein is estimated. |
| Keywords: | nitrogenated nanocrystalline diamond thin films amorphous carbon electrochemical impedance Mott-Schottky plots n-type semiconductor |
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