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Diffusion of oxide ions in LaFeO3 single crystal
Authors:Takamasa Ishigaki  Shigeru Yamauchi  Junichiro Mizusaki  Kazuo Fueki  Hiroyuki Naito  Tatsuya Adachi
Institution:Department of Industrial Chemistry, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan;Seiko Instruments & Electronics Ltd., Kameido, Koto-ku, Tokyo 136, Japan
Abstract:The tracer diffusion coefficient, D1O, of oxide ions in LaFeO3 single crystal was determined over the temperature range of 900–1100°C by the gas-solid isotopic exchange technique using 18O as a tracer. For the determination of D1O, the depth profile of 18O was measured by means of a secondary ion mass spectrometer (SIMS). The surface exchange reaction was found to be slow and the surface exchange rate constant, k, was determined together with D1O. It was found that D1O at 950°C is proportional to P?0.58O2, where PO2 is an oxygen pressure. The vacancy mechanism was determined for the diffusion of oxide ions from the PO2 dependence. The vacancy diffusion coefficient, DV, for LaFeO3 was nearly the same as that for LaCoO3 at the same temperature. The activation energy for migration of oxide ion vacancies was 74 kJ · mole?1 for both oxides.
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