自发有序Ga_(0.5)In_(0.5)P合金的拉曼光谱研究 |
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引用本文: | 李国华,刘振先,韩和相,汪兆平,董建荣.自发有序Ga_(0.5)In_(0.5)P合金的拉曼光谱研究[J].光散射学报,1995(Z1). |
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作者姓名: | 李国华 刘振先 韩和相 汪兆平 董建荣 |
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作者单位: | 中国科学院半导体研究所,半导体扭晶格国家重点实验室,中国科学院半导体研究所,半导体材料科学实验室 |
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摘 要: | 自发有序Ga_(0.5)In_(0.5)P合金的拉曼光谱研究李国华,刘振先,韩和相,汪兆平,董建荣(中国科学院半导体研究所,半导体扭晶格国家重点实验室北京100083)(中国科学院半导体研究所,半导体材料科学实验室北京100083))RamanSca...
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Raman Scattering of Spontaneously Ordered Ga_(0.5) In_(0.5)P Alloy |
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Abstract: | Abstract Raman scattering has been measured for three spontaneously or-dered and a disordered Ga_(0.5)In_(0.5)P alloy. The ordered samples have the charac-teristic band-gap energy anomaly(40, 90 and 120 meV lower than that of the disordered allov). Three peaks have been observed in the Raman spectra, cor-responding to the Gap-like LO(~380 cm~(-1)), InPlike LO (~360 cm~(-1))and TO/~330 cm~(-1) ) modes, respectively. The Gap-like LO mode frequencies are 3 cm~f(-1),6cm~(-1), and 6 cm~(-1) larger than that of disordered sample for three ordered sample. The polarization properties of the ordered alloys is similar to that of the bulk Ⅲ-Ⅴ semiconductors. |
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