Infrared transmissivity of heavily doped contact layers on extrinsic silicon IR-detectors |
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Authors: | K Hölzlein G Pensl M Schulz |
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Institution: | 1. Institut für Angewandte Physik, Universit?t Erlangen-Nürnberg, D-8520, Erlangen, Germany
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Abstract: | The infrared transmissivity of heavily dopedp-type contact layers on silicon was studied in the 3–5 μm and 8–14 μm wavelength range in order to optimise the layer thickness
and doping concentration for antireflection coating. The transmissivity of surface layers and buried layers was computed taking
into account the free carrier optical dispersion by the Drude theory and corrections due to intervalence band transitions
as well as multiple reflections and interferences in the layer. The computations are in quantitative agreement with measurements
on contact layers formed by multiple boron implantation. It was found that the free carrier absorption loss completely cancels
the gain due to the antireflection effect for a surface layer. Transmissivities of around 73% may be obtained by a buried
heavily doped layer. |
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Keywords: | 85 60 Gz 78 65 Id 78 20 Dj |
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