Quantum-chemical investigation of the influence of the vacant orbitals of the heteroatom on the shaping of the electronically excited states and luminescence-spectroscopic properties of triphenylgallium

The electronic structure of the triphenylgallium molecule in the ground and electronically excited states has been calculated in the framework of the CNDO/S-CI method in sp and spd bases. The electron density in the AO's and atoms, the first ionization potential the energies and matrices of the changes in the electron density of the S_n and T_n states, the matrix elements of the spin-orbit coupling operator and, the intensities and directions of polarization of the S_n S_o and T₂ T_n transitions, and the phosphorescence lifetimes have been calculated. The following spectroscopic parametrization has been proposed for the Ga atom in the sp and spd bases: 1/2(I_s + a_s) = 10.075 eV, 1/2(I_p + A_p) = 4.265 eV, 1/2(I_d + A_d)=0, _Ga^p=5 eV, _Ga^d=O, _Ga^sp=–7 eV, _Ga^spd=–10 eV, and _s,p,d=1.433. The influence of the d AO's on the shaping of the orbital nature of the S₁ and T₂ states has been analyzed.Translated from Teoreticheskaya i Éksperimental'naya Khimiya, Vol. 21, No. 5, pp. 584–590, September–October, 1985.