| 离子轰击产生湍层氮化硼 |
| |
| 引用本文： | 王震遐,王玟珉,阮美玲,许浔江.离子轰击产生湍层氮化硼[J].中国物理 C,2000,24(11):1055-1059. |
| |
| 作者姓名： | 王震遐 王玟珉 阮美玲 许浔江 |
| |
| 作者单位： | [1]中国科学院上海原子核研究所,上海 [2]中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家,上海 |
| |
| 基金项目： | 国家自然科学基金，中国科学院基础研究项目，中国科学院重点实验室基金，19735004，952-J1-414，，，， |
| |
| 摘 要： | 用高分辨率透射电子显微镜检查了N+2离子轰击后的氮化硼样品.发现在片状六方形氮化硼sp2层的弯折区,有0.35mm晶面间距的湍层氮化硼形成.虽然其形成机制尚不清楚,但是基于束流–固体相互作用观点的讨论可能是了解湍层氮化硼结构生长过程的关键所在.
|
| 关 键 词： | 湍层氮化硼 离子轰击 透射电子显微镜 |
| 收稿时间： | 1999-12-2 |
Turbostractic Boron Nitride Produced by Ion Bombardment |
| |
| WANG ZhenXia,WANG WenMin,RUAN MeiLing,XU XunJiang.Turbostractic Boron Nitride Produced by Ion Bombardment[J].High Energy Physics and Nuclear Physics,2000,24(11):1055-1059. |
| |
| Authors: | WANG ZhenXia WANG WenMin RUAN MeiLing XU XunJiang |
| |
| Abstract: | Fine structures appearing in boron nitride(BN) sample bomparded by N 2 ion (60keV) were examined by JEM-200cx high-resolution transmission electron microscopy (HRTEM) at 200kV accelerating voltage. In the curved region of plate-like h-BN crystal sp2 sheets (spacing 0. 33nm), it was observed that the t-BN structure with an average interplaner spacing of 0. 35 nm was formed. Although the mechanism of formation of the t-BN structure is nuclear, it appears that our discussion based on the viewpoint of beam-solid interaction may be critical in understanding the growth process of the t-BN structures. |
| |
| Keywords: | turbostractic boron nitride ion bombardment transmission electron microscopy |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《中国物理 C》浏览原始摘要信息 |
| 点击此处可从《中国物理 C》下载免费的PDF全文 |
