| 用高分辨率沟道背散射谱仪研究硅的低能氮离子氮化 |
| |
| 引用本文： | 朱德彰,潘浩昌,曹建清,朱福英,陈国明,陈国樑,杨絜,邹世昌.用高分辨率沟道背散射谱仪研究硅的低能氮离子氮化[J].物理学报,1990,39(8):96-99. |
| |
| 作者姓名： | 朱德彰 潘浩昌 曹建清 朱福英 陈国明 陈国樑 杨絜 邹世昌 |
| |
| 作者单位： | (1)中国科学院上海冶金研究所,上海,200050; (2)中国科学院上海原子核研究所,上海,201800 |
| |
| 摘 要： | 用高分辨率沟道背散射技术研究了低能N离子注入单晶硅形成氮化硅的过程。测出了N和位移Si原子的深度分布。提出在N离子注入时同时存在着三个过程——注入、溅射和释放。由此建立了一个微分方程描写样品中剩余N的浓度变化,并讨论了氮化硅形成机制。
关键词：
|
| 收稿时间： | 1989-10-18 |
STUDY ON LOW ENERGY ION BEAM NITRIDATION OF Si BY HIGH RESOLUTION CHANNELING-BACKSCATTERING |
| |
| ZHU DE-ZHANG,PAN HAO-CHANG,CAO JIAN-QING,ZHU FU-YING,CHEN GUO-MING,CHEN GUO-LIANG,YANG JIE and ZOU SHI-CHANG.STUDY ON LOW ENERGY ION BEAM NITRIDATION OF Si BY HIGH RESOLUTION CHANNELING-BACKSCATTERING[J].Acta Physica Sinica,1990,39(8):96-99. |
| |
| Authors: | ZHU DE-ZHANG PAN HAO-CHANG CAO JIAN-QING ZHU FU-YING CHEN GUO-MING CHEN GUO-LIANG YANG JIE and ZOU SHI-CHANG |
| |
| Abstract: | Low energy ion beam nitridation of silicon has been investigated by high resolution channeling-backscattering technique. The profiles of nitrogen and displaced silicon atoms are obtained, During the bombardment, all the three processes of implanting, sputtering and releasing exist. A differential equation is deduced and the mechanism of formation of silicon nitride is discussed. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
