Reconstruction of the -GaO (1 0 0) cleavage surface to hexagonal GaN after NH nitridation

The potential use of β-Ga₂O₃ wafers as transparent conductive substrates for compounds with hexagonal structure, in particular the GaN-system, is shown. Nitridation of the main cleavage plane under high temperature and NH₃ gas results in the substitution of O by N on the surface, and a simultaneous surface reconstruction. The 2-fold symmetry of the initial (1 0 0) plane changes to a 6-fold symmetry, keeping the 0 1 0] azimuth as a symmetry direction. The RHEED pattern suggests the formation of GaN on the β-Ga₂O₃ surface, with the b-axis of β-Ga₂O₃ parallel to the direction of GaN, so that β-Ga₂O₃ can be used as a substrate with no lattice mismatch to GaN.