Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation |
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Authors: | N A Poklonski N I Gorbachuk S V Shpakovski and A Wieck |
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Institution: | 1.Belarusian State University,Minsk,Belarus;2.“Zavod Tranzistor” Unitary Enterprise,“Integral” Research and Production Corporation,Minsk,Belarus;3.Ruhr-Universit?t Bochum,Bochum,Germany |
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Abstract: | Silicon diodes with a p
+-n junction made in a 48-μm-thick phosphorus-doped silicon epilayer (resistivity ρ = 30 Ω cm) grown on antimony-doped Si(111)
wafers (ρ = 0.01 Ω cm) are studied. The diodes are irradiated by high-energy (3.5 MeV) electrons with fluences from 5 × 1015 to 2 × 1016 cm−2. It is shown that the conventional equivalent circuit of the diode that consists of a parallel RC network and a series-connected resistor inadequately describes the dependence of the dielectric loss tanδ on variable current
frequency f in the range 1 × 102–3 × 107 Hz. Another equivalent circuit is suggested that includes not only the capacitance and resistance of the n-base (the latter increases because radiation-induced defects are compensated for by shallow donors) but also the f dependence of the capacitance of the space-charge region, which is due to retarded charge exchange between deep-level radiation-induced
defects. |
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