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Effect of proton irradiation on electrical properties of a-As2S3 |
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| Authors: | Sanjeev Gautam Anup Thakur D.K. Shukla H.J. Shin Keun Hwa Chae K.P. Singh Navdeep Goyal |
| Affiliation: | 1. Nano Analysis Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea;2. Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;3. U.C.o.E, Punjabi University Patiala, Punjab, 147-002, India;4. Department of Physics, Panjab University Chandigarh 160-014, India |
| Abstract: | This paper reports the effect of proton irradiation on the electrical properties of a-As2S3 in the temperature range of 323–418 K and frequency range 0.1–100 kHz. The variation of transport property is studied with proton irradiation dose (1 × 1013 ions/cm2 and 1 × 1015 ions/cm2). It has been observed that proton irradiation changes the dc conductivity (σdc), dc activation energy (ΔEdc) and ac conductivity (σac(ω)). The σdc and σac(ω) increases with dose of proton irradiation. The value of frequency exponent (s) decreases with the temperature and irradiation dose. These results are explained in terms of change in density of defect states in these glasses. |
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