使用分子量级前躯体制备CuInSe_2及其合金并应应用用于光伏发电(英文)

黄铜矿铜铟硒化合物CuInSe2及其与硫或嫁的合金CuIn(Se,S)2或CuInGa(Se,S)2,即所说的CIGS,已通过20%的实验室规模器件光电转换效率展示了其地面光伏应用的巨大潜力。为了减少初始资金成本,提高材料利用率,科研工作者们已经尝试了许多努力通过非真空制程沉积CIGS。这些制程包括电镀工艺,基于颗粒(浆或纳米颗粒)的制程和基于分子量级前趋体的制程。原则上,分子量级前趋体可以使组分元素达到充分混合,可以最大程度地实现组份在基板不同区域的均一分布。这对于一个复杂的涉及到五个主要元素的化合物系统尤为重要。从这个角度来看,分子前趋体的方法具有大面积均匀沉积铜铟镓硒的巨大潜力。这篇综述将着重讨论使用分子前趋体沉积铜铟镓硒制程的最新发展。

Molecular-Precursor Solution Deposition of CuInSe_2 and Its Alloys for Photovoltaic Applications

Chalcopyrite compound CuInSe2 and its alloy with S or Ga,i.e.,CuIn(Se,S)2 or Cu(In,Ga)Se2,which is commonly known as CIGS,have proved its great potential for terrestrial photovoltaic applications by demonstrating 20% efficiency for laboratory-scale devices.To reduce initial capital cost and increase material utilization,many efforts have been carried out to deposit CIGS using non-vacuum based processes.These processes include electrodeposition process,particulate-based processes(slurry or nanoparticle-based...