多孔硅的光生伏特效应

多孔硅(PS)的可见光致发光的发现1],引起人们对PS的光电特性及其在光电器件上应用可能性的广泛探索.已报道用PS制成发出可见光的电致发光器件2]及高灵敏的光探测器件3].本文将报道PS层与金属接触,光照时能出现很强的光生伏特效应,利用这一特性有可能制成高效的光电转换器件.

PHOTOVOLTAIC EFFECT OF POROUS SILICON

A new photovoltaic characteristic of porous silicon(PS)is reported in this paper.The PS layer was prepared by anodization of p-type Si single cryatal wafers in HF aqueous solution at current density of about 10mA/cm2.When the PS layer was irradiated by light,an intense photo-electromotive force was generated on the sample.The potential of PS layer is higher than that of substrute.The photocurrent was inereased with increasing illuminance.There was no any photoelectromotive force on a p-type Si single crystal wafer when it was irradiated with light.These facts demonstrat that the photovoltaic effect is originated in PS layer.This effect was also observed on samples formed by n-Si single crystal wafers.