Molecular Beam Mass Spectrometry System for Characterization of Thermal Plasma Chemical Vapor Deposition |
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| Authors: | Soonam Park Feng Liao John M Larson Steven L Girshick Michael R Zachariah |
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| Institution: | (1) Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455, U.S.A.;(2) Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455, U.S.A. Current address: Spinnaker Semiconductor, Eden Prairie, MN 55344, U.S.A.;(3) Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455, U.S.A. E mail: slg@umn.edu;(4) Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455, U.S.A. Email: mrz@me.umn.edu |
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| Abstract: | A molecular beam mass spectrometry system for in situ measurement of the concentration of gas phase species including radicals impinging on a substrate during thermal plasma chemical vapor deposition (TPCVD) has been designed and constructed. Dynamically controlled substrate temperature was achieved using a variable thermal contact resistance method via a backside flow of an argon/helium mixture. A high quality molecular beam with beam tobackground signal greater than 20 was obtained under film growth conditions by sampling through a small nozzle (75  m) in the center of the substrate. Mass discrimination effects were accounted for in order to quantify the species measurements. We demonstrate that this system has a minimum detection limit of under 100 ppb. Quantitative measurements of hydrocarbon species (H, H2, C, CH3, CH4, C2H2, C2H4) using Ar/H2/CH4 mixtures and silicon species (Si, SiH, SiH2, SiCl, SiCl2, Cl, HCl) using Ar/H2/SiCl4 mixtures were obtained under thermal plasma chemical vapor deposition conditions. |
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| Keywords: | Thermal plasma chemical vapor deposition mass spectrometry |
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