| 溅射氧化铁薄膜的Hall效应 |
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| 引用本文： | 尤广建,余梅,罗惠临.溅射氧化铁薄膜的Hall效应[J].物理学报,1988,37(10):1613-1618. |
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| 作者姓名： | 尤广建 余梅 罗惠临 |
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| 作者单位： | (1)Department of Electrical & Computer Engineering University of California,San Diego,La Jolla,CA 92093,USA; (2)北京大学物理系 |
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| 摘 要： | 在磁场垂直于薄膜表面,磁感应强度B由0—1.4T变化的条件下,测量了溅射氧化铁薄膜的Hall效应。从实验数据得到了Fe3O4薄膜和γ-Fe2O3薄膜的寻常Hall系数R0和非常Hall系数Rs,计算出这两种薄膜的Hall迁移率μH分别是2.35和1.56(cm)2/V·s。这个结果适合于大极化子导电机制的条件(ν≥1(cm)关键词：
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| 收稿时间： | 1987-10-16 |
THE HALL EFFECT IN RF-SPUTTERED IRON OXIDE THIN FILMS |
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| YOU GUANG-JIAN,YU MEI and LUO HUI-LIN.THE HALL EFFECT IN RF-SPUTTERED IRON OXIDE THIN FILMS[J].Acta Physica Sinica,1988,37(10):1613-1618. |
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| Authors: | YOU GUANG-JIAN YU MEI and LUO HUI-LIN |
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| Abstract: | Hall effect measurements were carried out on rf-sputtered Fe3O4 and γ-Fe2O3 thin films in magnetic field up to 1.4 T applied perpendicular to the film plane. Their ordinary and extraordinary coefficients are determined from the experimental data. The calculated values of the Hall mobilities for these two films are 2.35 and 1.56cm2/V·s respectively, which are larger than 1 cm2/V·s, suggesting the occurrence of large polaron scattering. The extraordinary Hall effects were compared by using Berger side-jumping model. The negative magnetic resistivity is also observed for these two films. |
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