| V含量对ZnO薄膜结构及光学特性的影响 |
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| 引用本文： | 阮宜斌,孟立建,梁二军.V含量对ZnO薄膜结构及光学特性的影响[J].无机化学学报,2006,22(12):2247-2252. |
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| 作者姓名： | 阮宜斌 孟立建 梁二军 |
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| 作者单位： | 1. 郑州大学物理工程学院,教育部材料物理重点实验室,郑州,450052
2. 郑州大学物理工程学院,教育部材料物理重点实验室,郑州,450052;Departamento de Fisica, Instituto Superior de Engenharia do Porto, Pua Dr. António Bernardino de Almeida 431, 4200-072 Porto, Portugal |
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| 基金项目： | 河南省高校杰出科研人才创新工程项目 |
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| 摘 要： | 0引言氧化锌是一种六角纤锌矿结构的直接宽带隙半导体,其室温下禁带宽度为3.37eV。它具有多种优良的物理性能,在声表面波1,2]、透明电极3,4]、光电材料5]、蓝光器件6]等方面都有较大的应用潜力。氧化锌价格低廉,不仅能制成良好的半导体和压电薄膜,亦能够制成良好的透明导电薄膜。理论计算表明7],氧化锌掺杂V、Cr、Fe、Co、N i元素能够产生自旋极化,形成高于室温的稀磁性透明半导体,是下一代微电子和光电子领域自旋电子学器件有重要价值的材料之一。根据理论计算,V掺杂的ZnO膜具有最高的居里温度。V yatkin实验小组8]用钒离子注入…
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| 关 键 词： | ZnO薄膜 V掺杂 直流反应共溅射 光学性质 |
| 文章编号： | 1001-4861（2006）12-2247-06 |
| 收稿时间： | 2006-07-01 |
| 修稿时间： | 2006-08-30 |
Effect of Vanadium Content on Structure and Optical Properties of Doped ZnO |
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| RUAN Yi-Bin,MENG Li-Jian and LIANG Er-Jun.Effect of Vanadium Content on Structure and Optical Properties of Doped ZnO[J].Chinese Journal of Inorganic Chemistry,2006,22(12):2247-2252. |
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| Authors: | RUAN Yi-Bin MENG Li-Jian and LIANG Er-Jun |
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| Institution: | School of Physical Science & Engineering and Key Laboratory of Materials Physics of Ministry of Education of China, Zhenghou University, Zhengzhou 450052,School of Physical Science & Engineering and Key Laboratory of Materials Physics of Ministry of Education of China, Zhenghou University, Zhengzhou 450052;Departamento de Física, Instituto Superior de Engenharia do Porto, Rua Dr. António Bernardino de Alme and School of Physical Science & Engineering and Key Laboratory of Materials Physics of Ministry of Education of China, Zhenghou University, Zhengzhou 450052 |
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| Abstract: | Vanadium-doped zinc oxide thin films with preferred c-axis orientation were deposited on glass substrates by DC-reactive co-sputtering. The deposited films were characterized by SEM, EDS, XRD and optical transmittance spectrum. The effect of V doping on the structural and optical properties of ZnO thin films was studied. It is found that the sample has a highly c-axis orientation and a comparatively good crystallization with lower mass percentage of vanadium doping. All the V-dopped ZnO thin films are in compressive stress condition and compression stress increases as vanadium content is increased. Refractive index n is lowered firstly and then increased, while extinction coefficient k has a trend of rising, and optical band gap rises a little bit firstly and then diminishes obviously when vanadium content is increased. |
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| Keywords: | ZnO thin films V-doped DC reactive co-sputtering optical property |
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